2N5551S-RTK/P
| QTY |
UNIT PRICE |
EXT PRICE |
| 1 |
0.0081 |
|
| 10 |
0.0079 |
|
| 100 |
0.0077 |
|
| 1000 |
0.0074 |
|
| 10000 |
0.0071 |
|
| Products Specifications |
| Collector Cut-Off Current (Icbo) | 50nA |
|---|
| Collector-Emitter Breakdown Voltage (Vceo) | 160V |
|---|
| Power Dissipation (Pd) | 350mW |
|---|
| Collector Current (Ic) | 600mA |
|---|
| DC Current Gain (hFE@Ic,Vce) | 80@10mA,5V |
|---|
| Transition Frequency (fT) | 100MHz |
|---|
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 200mV@50mA,5mA |
|---|
| Transistor Type | - |
|---|
| Operating Temperature | +150u2103@(Tj) |
|---|
